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| SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance PG-TO262 V DS RDS(on) ID PG-TO220FP 650 0.38 11 PG-TO220 V A Type SPP11N65C3 SPA11N65C3 SPI11N65C3 Package PG-TO220 PG-TO220FP PG-TO262 Ordering Code Q67040-S4557 SP000216318 Q67040-S4561 Marking 11N65C3 11N65C3 11N65C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Page 1 Value SPP_I SPA Unit A 111) 71) 33 340 0.6 4 20 30 33 W C Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=2.5A, V DD=50V 33 340 0.6 4 20 30 125 A mJ Avalanche energy, repetitive tAR limited by T jmax 2) ID=4A, VDD=50V Avalanche current, repetitive tAR limited by T jmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C Operating and storage temperature Rev. 2.9 A V -55...+150 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=500A, VGS=VDS V DS=600V, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA T sold - Values typ. 35 max. 1 3.8 62 80 62 260 Unit K/W C Symbol Conditions min. 650 2.1 - Values typ. 730 3 0.1 0.34 0.92 0.86 max. 3.9 Unit V V(BR)DSS V GS=0V, I D=0.25mA V(BR)DS V GS=0V, I D=4A A 1 100 100 0.38 nA Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) V GS=20V, V DS=0V V GS=10V, I D=7A Tj=25C Tj=150C Gate input resistance RG f=1MHz, open drain Rev. 2.9 Page 2 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance,4) energy related Effective output capacitance,5) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =480V, ID =11A, VGS =0 to 10V VDD =480V, ID =11A Symbol g fs Ciss Coss Crss Co(er) Co(tr) td(on) tr td(off) tf Conditions min. V DS2*I D*RDS(on)max, ID=7A V GS=0V, VDS=25V, f=1MHz Values typ. 8.3 1200 390 30 45 85 10 5 44 5 max. 70 9 - Unit S pF V GS=0V, V DS=0V to 480V V DD=380V, V GS=0/10V, ID=11A, RG=6.8 - ns - 5.5 22 45 5.5 60 - nC V(plateau) VDD =480V, ID =11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV=EA R*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% VDSS. Rev. 2.9 Page 3 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPA 0.15 0.03 0.056 0.194 0.413 2.522 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Symbol Value Unit SPA 0.0001878 0.0007106 0.000988 0.002791 0.007401 0.412 Ws/K Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC =25C Values typ. 1 400 6 41 1200 max. 11 33 1.2 600 - Unit A VGS =0V, IF =IS VR =480V, IF =IS , diF /dt=100A/s - V ns C A A/s Tj =25C SPP_I Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.03 0.056 0.197 0.216 0.083 SPP_I 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 Tj P tot (t) R th1 R th,n T case External Heatsink C th1 C th2 C th,n T amb Rev. 2.9 Page 4 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 1 Power dissipation Ptot = f (TC) SPP11N65C3 2 Power dissipation FullPAK Ptot = f (TC) 35 140 W W 120 110 100 25 P tot 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 P tot 20 15 10 5 C 0 160 0 20 40 60 80 100 120 TC C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 10 0 10 1 10 2 V 10 V DS 3 10 -2 10 0 10 1 10 2 V 10 VDS 3 Rev. 2.9 Page 5 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 5 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = t p/t 10 1 6 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 40 K/W A 0 20V 10V 8V 7V 10 32 28 Z thJC 10 -1 ID 24 20 6,5V 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6V 16 12 8 4 5,5V 10 -3 5V 4,5V 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 1 0 0 3 6 9 12 15 18 21 V 27 VDS 7 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 22 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 2 A 18 16 20V 8V 7V 7.5V 4V 4.5V 5V 5.5V 6V 6V 14 12 10 8 6 4.5V 5V 5.5V R DS(on) 1.6 ID 1.4 1.2 1 0.8 4 4V 0.6 2 0 0 5 10 15 0.4 25 0 2 4 6 8 10 6.5V 8V 20V 12 14 16 V V DS A ID 20 Rev. 2.9 Page 6 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, V GS = 10 V 2.1 SPP11N65C3 10 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 40 A 25C 1.8 32 1.6 28 1.4 1.2 1 0.8 0.6 98% 0.4 0.2 0 -60 typ 8 4 0 180 0 2 4 6 8 10 12 R DS(on) ID 24 20 16 12 150C -20 20 60 100 C Tj V 15 VGS 11 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 16 SPP11N65C3 12 Forward characteristics of body diode IF = f (V SD) parameter: Tj , tp = 10 s 10 2 SPP11N65C3 V A 12 VGS 0,8 VDS max 8 6 IF 10 0 10 0,2 VDS max 10 1 4 T j = 25 C typ T j = 150 C typ T j = 25 C (98%) T j = 150 C (98%) 10 0 10 20 30 40 50 -1 2 0 nC 70 0 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Rev. 2.9 Page 7 VSD 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS=380V, VGS=0/+13V, R G=6.8 70 14 Typ. switching time t = f (RG), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, I D=11 A 350 ns ns 60 55 50 45 td(off) 250 t t 40 35 30 25 20 15 10 5 0 0 2 4 6 8 tr tf td(on) 200 150 td(off) td(on) tr tf 100 50 A ID 0 12 0 10 20 30 40 50 RG 70 15 Typ. drain current slope di/dt = f(RG), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, I D=11A 3000 16 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, I D=11A 140 V/ns A/s 120 110 dv/dt(off) di/dt 2000 dv/dt di/dt(off) 100 90 80 1500 70 60 1000 50 40 30 20 0 0 20 40 60 80 dv/dt(on) 500 di/dt(on) RG 10 120 0 10 20 30 40 50 RG 70 Rev. 2.9 Page 8 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 17 Typ. switching losses E = f (I D), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, R G=6.8 0.04 18 Typ. switching losses E = f(R G), inductive load, T j=125C par.: VDS=380V, VGS=0/+13V,I D=11A 0.24 *) Eon includes SPD06S60 diode commutation losses mWs *) Eon includes SPD06S60 diode commutation losses mWs 0.03 0.16 Eoff E 0.02 E 0.12 0.08 Eon* Eon* 0.025 0.015 0.01 0.04 0.005 Eoff 0 0 2 4 6 8 A ID 0 12 0 10 20 30 40 50 RG 70 19 Avalanche SOA IAR = f (tAR) par.: T j 150 C 4 20 Avalanche energy EAS = f (T j) par.: ID = 2.5 A, V DD = 50 V 350 A mJ 3 Tj(Start)=25C 250 2.5 E AS 200 Tj(Start)=125C I AR 2 150 1.5 100 1 50 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 t AR 4 0 20 40 60 80 100 120 C 160 Tj Rev. 2.9 Page 9 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 21 Drain-source breakdown voltage V(BR)DSS = f (Tj) 785 22 Avalanche power losses PAR = f (f ) parameter: EAR=0.6mJ 300 V W V(BR)DSS 745 P AR 725 705 685 665 645 625 605 585 -60 200 150 100 50 -20 20 60 100 C 180 04 10 10 5 Hz f 10 6 Tj 23 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 24 Typ. Coss stored energy Eoss=f(V DS) 7.5 pF Ciss 10 3 J 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 0 600 0 100 200 300 400 V 600 V DS VDS Rev. 2.9 Page 10 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics Rev. 2.9 Page 11 2007-08-30 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.9 Page 12 2007-08-30 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 2.9 Page 13 2007-08-30 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO262-3-1, PG-TO262-3-21 (I-PAK) Rev. 2.9 Page 14 2007-08-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 Page 15 2007-08-30 |
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